On the growth drivers for GP MCUs, the market growth is driven by faster migration to 32 bit platform. ST has been the first to bring the ARM Cortex based solution, and now targets leadership position on 32bit MCUs. An overview of the STM32 portfolio indicates high-performance MCUs with DSP and FPU up to 608 CoreMark and up to180 MHz/225 DMIPS.
Features of the STM32F4 product lines, specifically, the STM32F429/439, include 180 MHz, 1 to 2-MB Flash and 256-KB SRAM. The low end STM32F401 has features such as 84 MHz, 128-KB to 256-KB Flash and 64-KB SRAM.
The STM32F401 provides thebest balance in performance, power consumption, integration and cost. The STM32F429/439 is providing more resources, more performance and more features. There is close pin-to-pin and software compatibility within the STM32F4
series and STM32 platform.
The STM32 F429-F439 high-performance MCUs with DSP and FPU are:
• World’s highest performance Cortex-M MCU executing from Embedded Flash, Cortex-M4 core with FPU up to 180 MHz/225 DMIPS.
• High integration thanks to ST 90nm process (same platform as F2 serie): up to 2MB Flash/256kB SRAM.
• Advanced connectivity USB OTG, Ethernet, CAN, SDRAM interface, LCD TFT controller.
• Power efficiency, thanks to ST90nm process and voltage scaling.
In terms of providing more performance, the STM32F4 provides up to 180 MHz/225 DMIPS with ART Accelerator, up to 608 CoreMark result, and ARM Cortex-M4 with floating-point unit (FPU).
The STM32F427/429 highlights include:
• 180 MHz/225 DMIPS.
• Dual bank Flash (in both 1-MB and 2-MB), 256kB SRAM.
• SDRAM Interface (up to 32-bit).
• LCD-TFT controller supporting up to SVGA (800×600).
• Better graphic with ST Chrom-ART Accelerator:
– x2 more performance vs. CPU alone
– Offloads the CPU for graphical data generation
* Raw data copy
* Pixel format conversion
* Image blending (image mixing with some transparency).
• 100 μA typ. in Stop mode.
Some real-life examples of the STM32F4 include the smart watch, where it is the main application controller or sensor hub, the smartphone, tablets and monitors, where it is the sensor hub for MEMS and optical touch, and the industrial/home automation panel, where it is the main application controller. These can also be used in Wi-Fi modules for the Internet of Things (IoT), such as appliances, door cameras, home thermostats, etc.
These offer outstanding dynamic power consumption thanks to ST 90nm process, as well as low leakage current made possible by advanced design technics and architecture (voltage scaling). ST is making a large offering of evaluation boards and Discovery kits. The STM32F4 is also offering new firmware libraries. SEGGER and ST signed an agreement around the emWin graphical stack. The solution is called STemWin.
Too many new entrants on sapphire for LED market with unrealistic capacity plans. Most underestimated the technical challenges! Prices are likely to remain low through 2013. Many new entrants will fail in 2013-2014: rationalization (M&A, bankruptcy, attrition). In the long term, vertical integration is desirable to avoid margin stacking, said Eric Virey, senior market and technology analyst, LED Materials and Sevices, Yole Developpement. He was presenting a seminar on how new sapphire applications can trigger an investment cycle.
According to him, adoption of CFL and LED stretches the replacement cycle and cannibalizes lamp volume sales. As for LED manufacturing capacity, with respect to nitride MOCVD reactors, 2009 and 2010 saw increases in Taiwan and Korea in late driven by LCD display market. The years 2010-2012 saw phenomenal increase in China. Government subsidies are likely to build up epitaxy capacity in the mainland, which should be more than $1.5 billion.
Currently there are ~110 companies with epitaxy capacity. Many will likely disappear! The current excess MOCVD capacity will be fully absorbed by mid-2014. The MOCVD reactor installation will resume mid-late 2013. The global MOCVD utilization rate is 61 percent. There is wide variability between leaders and tier 2 players in China. The Q4-2012 LED sapphire consumption was worth 3.9 million two inch equivalent per month.
As for companies in sapphire wafer, 130+ companies are involved in the sapphire substrate (established or development stage). Less than 30 currently are deriving meaningful revenue from LED substrates. The capacity is ~80 percent higher than demand. It could get worse in 2013! Prices are likely to remain low. Many new entrants will disappear, and others will scale back. A few will succeed.
Conditions for survival through 2013 include, having a lot of cash, be qualified in supply chain, achieve <$4/mm cost (2” basis), and serving other market could be a plus. As for wafer price trends, the finished wafers following similar trends. The 6” is now offered for <$200, but price can vary significantly based on specifications. There are said to be simulated 4” core cost structure for various manufacturers.
STMicroelectronics has launched the STM32 F4 series of microcontrollers (MCUs), based on the latest ARM Cortex-M4 core. This adds to the signal-processing capabilities and faster operations to the portfolio of STM32 MCUs.
The STM32 F4 series brings the world’s highest performance Cortex-M microcontrollers at 168 MHz FCPU/210 DMIPS and 363 Coremark score.
Vinay Thapliyal, technical marketing manager-India, Microcontroller Division, Greater China and South Asia region, STMicroelectronics Marketing Pvt Ltd, said that the series extends the ST’M32 portfolio of 250+ compatible devices already in production, including the F1 series, F2 series and ultra-low-power L1 series, respectively. ST is said to have 45 percent of the market share by units.
The STM32 F4 series of MCUs are re-inforced on five pillars:
* Real-time performance — 168MHz/210 DMIPS.
* Outstanding power efficiency.
* Superior and innovative peripherals.
* Maximum integration – 1Mbyte Flash, 192 Kbyte SRAM.
* Extensive tools and hardware — CMSIS DSP library, Matlab support, various IDE starter kits, RTOS and stacks.
A Coremark study says that STM32 F4 gives the best acceleration and highest speed. Thapliyal added, “We are ready for the market.” It takes ART to be #1 in performance: It is a combination of core, embedded Flash design, process, acceleration techniques, etc.
ST’s ART Accelerator, an adaptive real-time memory unleashes the Cortex M4 core’s maximum processing performance equal to 0-wait state execution, and Flash upto 168MHz. Real-time performance is the 32-bit multi AHB bus matrix. The layers are independent of each other.
The STM32 F4 series boasts a high-performance digital signal controller. The MCU leads to the ease of use of C programming, interrupt handling and ultra-low power. The FPU facilitates single precision, ease of use, better code efficiency, faster time to market, eliminates scaling and saturation, and easier support for meta-language tools. The DSP is based on Harvard architecture, single-cycle MAC and barrel shifter.
It also boasts of an outstanding power efficiency. The 230 μA/MHz, 38.6 mA at 168 MHz executing Coremark benchmark from Flash memory (with peripherals off), has been made possible with:
* ST’s 90nm process allowing the CPU core to run at only 1.2 V.
* ART Accelerator reducing the number of accesses to Flash.
* Voltage scaling to optimize performance/power consumption.
* VDD min down to 1.7 V.
* Low-power modes with backup SRAM and RTC support.
The low power in real-life applications is not just low-power mode. There is also a need to consider the percentage of time spend in low-power (LP) mode and in Run mode. If competitors are claiming better low-power modes, these are only an advantage if the overall system is spending more than 90 percent of the time doing nothing in low-power mode.
Superior and innovative peripherals includes, among others, two USB OTGs, two full duplexes PWMs at 168MHz, ADC at 2.4MSPS.
As for maximum integration, the 1-Mbyte Flash and 192-Kbyte SRAM memories available in the product accommodate advanced software stacks and user data, with no need for external memories. The 4-Kbyte SRAM battery back-up is used to save the application state and calibration data (SRAM block used as an EEPROM). In addition, the 528 bytes of OTP memory make it possible to store critical user data, such as the Ethernet MAC addresses or cryptographic keys. Read more…
STMicroelectronics has introduced the STM32L advanced ultra-low-power Cortex-M3 based MCU platform.
Built on cutting-edge proprietary process – robustness, it is part of a wide 32-bit product portfolio. The MCU platform is based on the just-enough energy concept and has an all inclusive package applications.
STM32L 32- to 128-Kbyte products are entering full production in the second half of March 2011. It is part of the industry’s largest ARM Cortex-M 32-bit microcontroller family with six STM32 families. STMicroelectronics is developing the STM32L portfolio up to 384 Kbytes of embedded memory. The STM32L is also Continua ready for its USB peripheral driver.
STM32L’s robustness has been derived from an automotive qualified process. It is all inclusive for ultra-low-power applications, and comes with hardware integrated features and software library packages. STM32L also has a ‘just-enough energy concept’, which includes undervolting, user controlled and an innovative architecture, all of this for less than 1 µA.
ST’s ultra-low-power EnergyLite platform features ST’s 130nm ultra-low-leakage process technology. It makes use of shared technology, architecture and peripherals. The company’s ultra-low-power portfolio for 2011 will be in production second half of March 2011. Many others will also be in production in the second half of April 2011. In fact, there will be over 100 part numbers from 4- to 384-Kbyte flash, and from 20 to 144 pins.
STM32L is based on ultra-low-power architecture, which is all inclusive for ultra low power applications. It also features ultra-low voltage, with power supply down to 1.8 V with BOR and also down to 1.65 V without BOR.The analog functional can be down to 1.8 V and the reprogramming capability can be down to 1.65 V.
STM32L is also flexible and secure, featuring +/- 0.5 percent internal clock accuracy when trimmed by RTC oscillator. It has up to five clock sources and has the MSI to achieve very low power consumption at seven low frequencies.
It also feattures dynamic voltage scaling in Run mode. The voltage scaling optimizes the product efficiency. User selects a mode (voltage scaling) according to external VDD supply, DMIPS performance required and maximum power consumption. It features the energy saving mode as well, down to 171 µA/DMIPS from Flash in Run mode. Read more…
STMicroelectronics has unveiled its roadmap for ARM Cortex-M4 and -M0 with products sampling from mid 2011 onward and production by end of 2011. It has also unleashed the full performance of the Cortex-M3 with its latest STM32 F-2 series.
According to Vinay Thapliyal, technical marketing manager, MCU, STMicroelectronics, India, there are over 30 new part numbers, pin-to-pin and software compatible with existing STM32 devices.
He said: “Today, we already have 110 parts running for the F-1 series, which is currently existing and in full production. Now, we are extending the family. This time, we have launched the F-2 family — the highest performance family — to unleash the ultimate performance of Cortex-M3.” Naturally, the F-2 series is benefiting the existing F-1 devices.
As mentioned, 30 new devices will be launched. They are already ramping now. “All of these belong to the high-performance, low-power family. We will also be revealing our roadmap for M4 and M0 — to be in production by end of 2011, with sampling by middle of 2011.”
ST’s F-2 series will further enhance real time preformance. Thapliyal added that ST has built in ART accelerator into these devices. This will deliver 150 DMIPS (Dhrystone MIPS) at 120MHz.
The adaptive real-time memory accelerator unleashes the Cortex-M3 core’s maximum processing performance equivalent to 0-wait state execution Flash up to 120 MHz.
The ART accelerator is a pre-fetch queue and branch cache mechanism that stores the first instructions and constants of the branches, interrupt and subroutine calls. The penalty occurs the first time those events occur like for any pipelining mechanism.
After that, the instructions stored in cache are pushed immediately in the pref-etch queue upon recognition of a stored branch address. In addition, the embedded Flash is organized in 128-bit rows, allowing up to 8 (16-bit) instructions to be read per access. Read more…
STMicroelectronics recently launched the STM32L EnergyLite ultra-low-power MCUs. I caught up with Vinay Thapiyal, technical marketing manager, MCU’s, ST India, to learn more.
The highlights of this series of MCUs include a commitment for ultra-low power — the EnergyLite platform is common for 8-bit (STM8L) and 32-bit (STM32L) MCUs. Also, it is strong on pure energy efficiency, with high performance combined with ultra low power, i.e., high high energy saving. Finally, the ultra low power member in STM32 portfolio enriches both the STM32 ultra-low-power EnergyLite platform and the STM32 portfolio.
According to Thapliyal, STMicroelectronics has been involved in the MCU market for a long time. Off late, it has started focusing on the STM32 — the ARM Cortex based MCU and the STM8 — for 8-bit family. “We have started converging our old families into these two domains,” he added.
The STM32F is the foundation of the STM32 family. STM32F is a family of low power MCUs based on the 32-bit ARM Cortex M3 architecture.
The STM8 is a family of MCUs based on ST’s propritetary atchitecture. The STM32L is STMicroelectronics’ ultra low power family mainly used for portable and very low power applications.
The ultra-low-power EnergyLite platform, featuring the STM32L and the STM8L is based on STMicroelectronics’ 130 nm ultra-low-leakage process technology. They share common technology, architecture and peripherals. The STM8, which was launched in 2009, has caught on very fast. It is a high performance, low cost MCU.
He added that STMicroelectronics started with 130nm technology, and low pin count and low flash on STM8, while higher memory and high pin count is available on the STM32. Read more…
“Green energy is the order of the day,” stated K. Rosaiah, Hon’ble chief minister of Andhra Pradesh. “It is the responsibility of every country and every citizen to see that our dependence on conventional energy can be reduced to the extent possible, and to focus our efforts on the development of renewable energy sources.”
He was speaking at the ongoing Solarcon India 2009, a three-day exhibition and conference organized by Semiconductor Equipment and Materials International (SEMI), in association with Intersolar, and in partnership with the India Semiconductor Association (ISA) and FabCity.
According to him, a sizeable gap exists between the demand and supply of energy. Solar energy becomes critical in the context of climate change and global warming. The Prime Minister had launched the National Action Plan on Climate Change in June 2008.
The Solar Mission Plan, to be announced on November 14, aims to achieve 20GW of solar generation capacity by 2020. There are plans to deliver on the creation of 1 lakh new jobs during the course of the plan.
“At present, solar energy was high on absolute costs compared to other sources of power. The Solar Mission would definitely drive the cost as rapidly as possible,” the chief minister said.
He added that Solarcon India had attracted 67 exhibitors from 16 countries, and over 400 delegates. This will be an annual event from now on, to showcase FabCity and SolarCity initiatives of the state government.
Now, it is time for India!
Earlier, delivering the welcome address, BV Naidu, chairman, India Semiconductor Association (ISA) said that the Solarcon India 2009 was happening at the right time and at the right place. “We have heard the success stories in the USA, Japan, Germany, etc. Now, it is time for India!”
He added that Andhra Pradesh had leap frogged in solar PV, and hence, this event was being held in Hyderabad. Also, FabCity has taken the lead in managing to attract manufacturing. Among the 15 proposals on solar PV received by government of India under the semiconductor policy, five proposals have been submitted by companies located in Andhra Pradesh. According to him, Andhra Pradesh had the capability to take on at least 20 percent target of the solar mission plan, given the kind of leadership the state has shown so far.
Naidu further advised that Andhra Pradesh was also going to host the Fraunhofer ISE, which will be set up here. Prof. Eicke R Weber, director, Fraunhofer Institute, will be signing the MoU to set up the institute in India. Read more…
Recently, SEMI (Semiconductor Equipment and Materials International) released its World Fab Forecast report. This report mentions that projected decline in world semiconductor fab equipment spending of 20 percent is likely for 2008. However, a rebound of over 20 percent in spending is expected in 2009, driven by over 70 fab projects.
The August 2008 edition of this report lists 53 fab equipping projects and up to 21 construction projects for fabs in 2009. It is sincerely hoped that at least one of the fabs likely from the Southeast Asian region is from India!
With the help of Scott Smith Senior Manager, Public Relations, SEMI, I was able to get in touch with Christian Gregor Dieseldorff, Senior Manager of Fab Information and Analysis at SEMI, in an attempt to find out more about the decline in global fab spends, these new fabs, and how these fabs can lead a turnaround in the global semiconductor industry. Thanks Scott!
So what are the chief reasons for the decline in fab spends during 2008? According to Dieseldorff, given the weaker economic conditions globally, coupled with higher energy and commodity prices and the financial crisis, the overall outlook for semiconductor growth in 2008 is for low-single digit growth in both revenues and units. As such, device makers have responded by cutting back their capital spending and pushing out fab projects or putting them on hold.
I was keen to find out the geographic breakup of these 70 new fabs that are likely yo come up in 2009.
Dieseldorff advised that these are not 70 new fabs coming up in 2009. Rather, the numbers reflect 300mm fabs only, and is a mix of on-going and new projects for fabs equipping and fab construction projects in 2009.
For equipping 300mm fabs, SEMI expects about: Americas 8, China 5, Europe and Mideast 4, Japan 7, South Korea 11, SE Asia 3 and Taiwan 15.
For 300mm fab construction projects, SEMI expects about: Americas 3, China 2, Europe and Mideast 1, Japan 2, South Korea 3, SE Asia 2 and Taiwan 8.
What are the salient features of some of these new fabs likely to come up next year (for instance, new tech nodes)? Dieseldorff highlighted that about 90 percent of the investments are for 300mm capacity, and the amount of spending for advanced nodes, such as 65nm, is increasing.
“Also, device makers are building larger fabs, which are termed “mega fabs,” so, to potentially realize a greater return based on scales of economy,” he added.
How will these new fabs contribute to a better performance from the global semicon industry? This will be quite interesting to witness.
Dieseldorff said that over the past several years, demand for semiconductor devices has been quite strong, and so, the industry has had to bring on capacity to support this need, both in terms of needed capacity and technology. Even with the slower market growth in 2008, recent industry data shows healthy levels of fab capacity utilization, especially for the advanced technology generations and for 300mm manufacturing.
He added: “The expectation is that demand for semiconductors will strengthen once global economic conditions improve. So, the capacity addition that is coming online this year and the fab projects that are equipping and beginning construction in 2009 are necessary to meet the future demand.”
So how will all of this affect the overall memory market (e.g., 42pc increase in share for memory)? Dieseldorff shared his thought, a fact, known well to those in the semiconductor industry, that the memory market has been battered by declining average selling prices and a condition termed by some as “profitless prosperity.”
“Looking at demand forecasts specific to memory, tremendous growth is anticipated,” he forecasted.
However, the manufacturers in this device segment are battling it out for market share, and the general expectation is that consolidation will continue.
Also, joint-ventures and partnerships are becoming increasingly critical in the memory sector as manufacturers seek to leverage their existing resources to meet future technology and capacity requirements.
It would be interesting to find out why Taiwan and Korea are forecasted as likely to exceed Japan in fab spend?
According to Dieseldorff, in Korea, Samsung has been and is the key spender, and as a company, it will continue to invest so to have a dominant share in the memory sector.
He said: “In 2009, our expectation is for the DRAM manufacturers in Taiwan to boost spending after cutting back this year. We expect seven new 300 mm fab lines in Taiwan to come into production over the next two years.”
However, spending in Japan has been more measured and is likely to remain so. Toshiba, and its joint-venture partner, Sandisk are the big spenders in Japan, when it comes to new fab capacity. Other Japanese semiconductor manufacturers are more cautious and are focused more on technology spending.