Following a host of forecasts for 2014, it is now the turn of Applied Materials with its forecast for the year. First, I asked Om Nalamasu, senior VP, CTO, Applied Materials regarding the outlook for the global semicon industry in 2014.
Semicon outlook 2014
He said that Gartner expects the semiconductor industry to grow in mid-single digits to over $330 billion in 2014.
“In our industry – the semiconductor wafer fab equipment sector – we are at the beginning of major technology transitions, driven by FinFET and 3D NAND, and based a wide range of analyst projections, wafer fab equipment investment is expected to be up 10-20 percent in 2014. We expect to see a year-over-year increase in foundry, NAND, and DRAM investment, with logic and other spending flat to down.”
Five trends for 2014
Next, what are the top five trends likely to rule the industry in 2014?
Nalamasu said that the key trends continuing to drive technology in 2014 and beyond include 3D transistors, 3D NAND, and 3D packaging. 3D remains a central theme. In logic, foundries will ramp to 20nm production and begin early transition stages to3D finFET transistors.
With respect to 3D NAND, some products will be commercially available, but most memory manufacturers plan to crossover from planar NAND to vertical NAND starting this year. In wafer level packaging, critical mechanical and electrical characterization work is bringing the manufacturability of 3D-integrated stacked chips closer to reality.
These device architecture inflections require significant advances in precision materials engineering. This spans such critical steps as precision film deposition, precision materials removal, materials modification and interface engineering. Smaller features and atomic-level thin films also make interface engineering and process integration more critical than ever.
Driving technology innovations are mobility applications which need high performance, low power semiconductors. Smartphones, smart watches, tablets and wearable gadgets continue to propel industry growth. Our customers are engaged in a fierce battle for mobility leadership as they race to be the first to market with new products that improve the performance, battery-life, form-factor and user experience of mobile devices.
How is the global semiconductor industry managing the move to the sub 20nm era?
He said that extensive R&D work is underway to move the industry into the sub-20nm realm. For the 1x nodes, more complex architectures and structures as well as new higher performance materials will be required.
Some specific areas where changes and technology innovations are needed include new hard mask and channel materials, selective material deposition and removal, patterning, inspection, and advanced interface engineering. For the memory space, different memory architectures like MRAM are being explored.
FinFETs in 20nm!
By the way, have FinFETs gone to 20nm? Are those looking for power reduction now benefiting?
FinFET transistors are in production in the most advanced 2x designs by a leading IDM, while the foundries are in limited R&D production. In addition to the disruptive 3D architecture, finFET transistors in corporate new materials such as high-k metal gate (HKMG) that help to drastically reduce power leakage.
Based on public statements, HKMG FinFET designs are expected to deliver more than a 20 percent improvement in speed and a 30 percent reduction in power consumption compared to28nm devices. These are significant advantages for mobile applications.
Status of 3D ICs
Finally, what’s the status with 3D ICs? How is Applied helping with true 3D stacking integration?
Nalamasu replied that vertically stacked 3D ICs are expected to enter into production first for niche applications. This is due primarily to the higher cost associated with building 3D wafer-level-packaged (WLP) devices. While such applications are limited today, Applied Materials expects greater utilization and demand to grow in the future.
Applied is an industry leader in WLP, having spear-headed the industry’s development of through silicon via (TSV) technology. Applied offers a suite of systems that enable customers to implement a variety of packaging techniques, from bumping to redistribution layer (RDL) to TSV. Because of work in this area, Applied is strongly positioned to support customers as they begin to adopt this technology.
To manufacture a robust integrated 3D stack, several fundamental innovations are needed. These include improving defect density and developing new materials such as low warpage laminates and less hygroscopic dielectrics.
Another essential requirement is supporting finer copper line/spacing. Important considerations here are maintaining good adhesion while watching out for corrosion. Finally, for creating the necessary smaller vias, the industry needs high quality laser etching to replace mechanical drilling techniques.
The year 2014 is expected to be a major year for the global semiconductor industry. The industry will and continue to innovate!
Apparently, there are huge expectations from certain segments such as the so-called Internet of Things (IoT) and wearable electronics. There will likely be focus on the connected car. Executives have been stating there could be third parties writing apps that can help cars. Intel expects that technology will be inspiring optimism for healthcare in future. As per a survey, 57 percent of people believe traditional hospitals will be obsolete in the future.
Some other entries from 2013 include Qualcomm, who introduced the Snapdragon 410 chipset with integrated 4G LTE world mode for high-volume smartphones. STMicroelectronics joined ARM mbed project that will enable developers to create smart products with ARM-based industry-leading STM32 microcontrollers and accelerate the Internet of Things.
A look at the industry itself is interesting! The World Semiconductor Trade Statistics Inc. (WSTS) is forecasting the global semiconductor market to be $304 billion in 2013, up 4.4 percent from 2012. The market is expected to recover throughout 2013, driven mainly by double digit growth of Memory product category. By region, all regions except Japan will grow from 2012. Japan market is forecasted to decline from 2012 in US dollar basis due to steep Japanese Yen depreciation compared to 2012.
WSTS estimates that the worldwide semiconductor market is predicted to grow further in 2014 and 2015. According to WSTS, the global semiconductor market is forecasted to be up 4.1 percent to $317 billion in 2014, surpassing historical high of $300 billion registered in 2011. For 2015, it is forecasted to be $328 billion, up 3.4 percent.
All product categories and regions are forecasted to grow positively in each year, with the assumption of macro economy recovery throughout the forecast period. By end market, wireless and automotive are expected to grow faster than total market, while consumer and computer are assumed to remain stagnant.
Now, all of this remains to be seen!
Earlier, while speaking with Dr. Wally Rhines of Mentor, and Jaswinder Ahuja of Cadence, both emphasized the industry’s move to 14/16nm. Xilinx estimates that 28nm will have a very long life. It also shipped the 20nm device in early Nov. 2013.
In a 2013 survey, carried out by KPMG, applications markets identified as most important by at least 55 percent of the respondents were: Mobile technology – 69 percent; Consumer – 66 percent; Computing – 63 percent; Alternative/Renewal Energy – 63 percent; Industrial – 62 percent; Automotive – 60 percent; Medical – 55 percent; Wireline Communications – 55 percent.
Do understand that there is always a line between hope and forecasts, and what the end result actually turns out to be! In the meantime, all of us continue to live with the hope that the global semiconductor will carry on flourishing in the years to come. As Brian Fuller, Cadence, says, ‘the future’s in our hands; let’s not blow it!’
SEMICON Europa was recently held in Dresden, Germany on Oct. 8-10, 2013. I am extremely grateful to Malcolm Penn, chairman and CEO, Future Horizons for sharing this information with me.
SEMICON Europa included a supplier exhibition where quite a few 450mm wafers were on display. One highlight was a working 450mm FOUP load/unload mechanism, albeit from a Japanese manufacturer. These exhibits did illustrate though that 450mm is for real and no longer a paper exercise. There was also a day-long conference dedicated to 450mm in the largest room. This was crowded throughout the time and a large number of papers were given.
Paul Farrar of G450C began with a presentation about Supply Chain Collaboration for 450mm. His key message was there are 25 different tools delivered to G450C of which 15 are installed in the NFN cleanroom. This number will grow to 42 onsite and 19 offsite by Q1 2015.
He stated that Nikon aims to have a working 193i litho machine in 2H 2014 and install one in Albany in 1H 2015. Farrar also reported a great improvement in wafer quality which now exceed the expected M76 specification, and prime wafers to the M1 spec should be available in Q3 2014. There has also been good progress on wafer reclaim and it is hoped some wafers can be reused up to 10 times, although at least three is the target.
Metrology seems to be one of the most advanced areas with eight different machines already operational. The number of 450mm wafers in their inventory now stands at over 10,000 with these moving between the partners more rapidly. It was immediately noticeable from Farrar’s speech that G450C is now recognising the major contribution Europe is making to 450mm and is looking for more collaborations.
Facilities part of F450C
Peter Csatary of M&W then dealt with the facilities part of G450C, known as F450C. This group consists of:
• M&W (co-ordination)
• Mega Fluid Systems
• Haws Corp.
• Air Liquide
• Ceres Technlogies
• CS Clean Systems
F450C is seen as streamlining communications with the semiconductor companies and their process tool suppliers. The group will focus on four key areas, namely Environmental Footprint, Facility Interface Requirements, Cost and Duration, and Safety and Sustainability.
One interesting point raised was that 450mm equipment is inherently more massive and one suggestion has been that ceiling mounted cranes will be required to install and remove equipment. This of course means that fab roofs would need to be stronger than previously. This topic was discussed at the latest F450C meeting subsequent to this conference.
Another new concept is that of a few standardised 3D templates and adapter plates to allow fab services to be pre-installed before the equipment is placed. An interesting point made elsewhere by M&W is that the current preference is to place a fab where there are already other fabs in existence so that the infrastructure to transport products, materials and services is already in place, as are basic utilities such as power, natural gas and water supply.
However, the scale of the expected utility demand at 450 mm ups the stakes as for example a large 300 mm facility uses about 4 million gallons of water per day, whereas a 450 mm fab will use almost double that, putting immense strain on a location’s infrastructure should there be other fabs in the region. This could affect future site selections.
An outcome of this phenomenon is that the reduction, reclaim and re-use of materials will no longer be driven only by the desire to be a good corporate citizen, but will also be driven by cost control and to ensure availability of required resources such as power, water, specialty gases and chemicals.
Future Horizons hosted the 22nd Annual International Electronics Forum, in association with IDA Ireland, on Oct. 2-4, 2013, at Dublin, Blanchardstown, Ireland. The forum was titled ‘New Markets and Opportunities in the Sub-20nm Era: Business as Usual OR It’s Different This Time.” Here are excerpts from some of the sessions. Those desirous of finding out much more should contact Malcolm Penn, CEO, Future Horizons.
The global interest in graphene research has facilitated our understanding of this rather unique material. However, the transition from the laboratory to factory has hit some challenging obstacles. In this talk I will review the current state of graphene research, focusing on the techniques which allow large scale production.
I will then discuss various aspects of our research which is based on more complex structures beyond graphene. Firstly, hexagonal boron nitride can be used as a thin dielectric material where electrons can tunnel through. Secondly, graphene-boron nitride stacks can be used as tunnelling transistor devices with promising characteristics. The same devices show interesting physics, for example, negative differential conductivity can be found at higher biases. Finally, graphene stacked with thin semiconducting layers which show promising results in photodetection.
I will conclude by speculating the fields where graphene may realistically find applications and discuss the role of the National Graphene Institute in commercializing graphene.
The key challenge for future high-end computing chips is energy efficiency in addition to traditional challenges such as yield/cost, static power, data transfer. In 2020, in order to maintain at an acceptable level the overall power consumption of all the computing systems, a gain in term of power efficiency of 1000 will be required.
To reach this objective, we need to work not only at process and technology level, but to propose disruptive multi-processor SoC architecture and to make some major evolutions on software and on the development of
applications. Some key semiconductor technologies will definitely play a key role such as: low power CMOS technologies, 3D stacking, silicon photonics and embedded non-volatile memory.
To reach this goal, the involvement of semiconductor industries will be necessary and a new ecosystem has to be put in place for establishing stronger partnerships between the semiconductor industry (IDM, foundry), IP provider, EDA provider, design house, systems and software industries.
This presentation looks at the development of the semiconductor and electronics industries from an African perspective, both globally and in Africa. Understanding the challenges that are associated with the wide scale adoption of new electronics in the African continent.
Electronics have taken over the world, and it is unthinkable in today’s modern life to operate without utilising some form of electronics on a daily basis. Similarly, in Africa the development and adoption of electronics and utilisation of semiconductors have grown exponentially. This growth on the African continent was due to the rapid uptake of mobile communications. However, this has placed in stark relief the challenges facing increased adoption of electronics in Africa, namely power consumption.
This background is central to the thesis that the industry needs to look at addressing the twin challenges of low powered and low cost devices. In Africa there are limits to the ability to frequently and consistently charge or keep electronics connected to a reliable electricity grid. Therefore, the current advances in electronics has resulted in the power industry being the biggest beneficiary of the growth in the adoption of electronics.
What needs to be done is for the industry to support and foster research on this subject in Africa, working as a global community. The challenge is creating electronics that meet these cost and power challenges. Importantly, the solution needs to be driven by the semiconductor industry not the power industry. Focus is to be placed on operating in an off-grid environment and building sustainable solutions to the continued challenge of the absence of reliable and available power.
It is my contention that Africa, as it has done with the mobile communications industry and adoption of LED lighting, will leapfrog in terms of developing and adopting low powered and cost effective electronics.
Personalized, preventive, predictive and participatory healthcare is on the horizon. Many nano-electronics research groups have entered the quest for more efficient health care in their mission statement. Electronic systems are proposed to assist in ambulatory monitoring of socalled ‘markers’ for wellness and health.
New life science tools deliver the prospect of personal diagnostics and therapy in e.g., the cardiac, neurological and oncology field. Early diagnose, detailed and fast screening technology and companioning devices to deliver the evidence of therapy effectiveness could indeed stir a – desperately needed – healthcare revolution. This talk addresses the exciting trends in ‘PPPP’ health care and relates them to an innovation roadmap in process technology, electronic circuits and system concepts.
On the growth drivers for GP MCUs, the market growth is driven by faster migration to 32 bit platform. ST has been the first to bring the ARM Cortex based solution, and now targets leadership position on 32bit MCUs. An overview of the STM32 portfolio indicates high-performance MCUs with DSP and FPU up to 608 CoreMark and up to180 MHz/225 DMIPS.
Features of the STM32F4 product lines, specifically, the STM32F429/439, include 180 MHz, 1 to 2-MB Flash and 256-KB SRAM. The low end STM32F401 has features such as 84 MHz, 128-KB to 256-KB Flash and 64-KB SRAM.
The STM32F401 provides thebest balance in performance, power consumption, integration and cost. The STM32F429/439 is providing more resources, more performance and more features. There is close pin-to-pin and software compatibility within the STM32F4
series and STM32 platform.
The STM32 F429-F439 high-performance MCUs with DSP and FPU are:
• World’s highest performance Cortex-M MCU executing from Embedded Flash, Cortex-M4 core with FPU up to 180 MHz/225 DMIPS.
• High integration thanks to ST 90nm process (same platform as F2 serie): up to 2MB Flash/256kB SRAM.
• Advanced connectivity USB OTG, Ethernet, CAN, SDRAM interface, LCD TFT controller.
• Power efficiency, thanks to ST90nm process and voltage scaling.
In terms of providing more performance, the STM32F4 provides up to 180 MHz/225 DMIPS with ART Accelerator, up to 608 CoreMark result, and ARM Cortex-M4 with floating-point unit (FPU).
The STM32F427/429 highlights include:
• 180 MHz/225 DMIPS.
• Dual bank Flash (in both 1-MB and 2-MB), 256kB SRAM.
• SDRAM Interface (up to 32-bit).
• LCD-TFT controller supporting up to SVGA (800×600).
• Better graphic with ST Chrom-ART Accelerator:
– x2 more performance vs. CPU alone
– Offloads the CPU for graphical data generation
* Raw data copy
* Pixel format conversion
* Image blending (image mixing with some transparency).
• 100 μA typ. in Stop mode.
Some real-life examples of the STM32F4 include the smart watch, where it is the main application controller or sensor hub, the smartphone, tablets and monitors, where it is the sensor hub for MEMS and optical touch, and the industrial/home automation panel, where it is the main application controller. These can also be used in Wi-Fi modules for the Internet of Things (IoT), such as appliances, door cameras, home thermostats, etc.
These offer outstanding dynamic power consumption thanks to ST 90nm process, as well as low leakage current made possible by advanced design technics and architecture (voltage scaling). ST is making a large offering of evaluation boards and Discovery kits. The STM32F4 is also offering new firmware libraries. SEGGER and ST signed an agreement around the emWin graphical stack. The solution is called STemWin.
Skin inspired electronics can be used for mobile health such as wireless sensor bands, cell phone and computer at doctor’s office, according to Prof. Zhenan Bao, Stanford University. She was delivering the inaugural lecture on day two of the ongoing 13th Global Electronics Summit in Santa Cruz, USA.
There are organic field-effect transistors (OTFTs). The current flow is moderated by binding of molecules and pressure. E-skin sensor functions have touch (pressure) sensors, chemical sensors and biological sensors. There are other flexible pressure sensors such as conductive rubber, which is thick and has hysteresis. Another type is poly-vinylidene fluoride (PVDF) thin film. Yet another type is the OTFT touch (pressure) sensor.
There is an example of the heart pulse measurement. Another related device is the full pulse wave for medical diagnostics such as blood pressure monitoring, detecting arrhythmia, heart defects and vascular diseases. In terms of temperature sensing, Stanford has developed a flexible body temperature sensor made of plastic.
There is chemical sensing as well. These are very stable and can be put in sea water. There are also electronics to mimic the body, such as the biodegradable OTFT. Another example is the transparent, stretchable pressure sensor. Finally, the other attribute of the human skin is self healing. Stanford University also developed the all-self-healing e-skin.
The e-skin concept ‘Super Skin’ has touch pressure sensors, chemical or biological sensors in air – electronic nose and liquid environments – electronic tongue, flexible strechable materials, biocompatible or biodegradable, self-powered — strechable solar cells and self healing.
According to Prof. Yi Cui, Dept. of Materials, Science & Engineering, Stanford University, nanometer is an enabling technology. We can do applications such as electronics, energy, environment and health. Some examples are high energy batteries, printed energy storage devices on paper, textile and sponge, etc. He was delivering the inaugural address at the Globalpress Electronics Summit 2013, being held in Santa Cruz, USA.
High energy battery has portable and stationary applications. In portable, energy density, cost and safety are important. In stationary, cost, power, energy efficiency and ultra-long life are important. The standard is 500 cycles at 80 percent. One of the challenges of silicon anodes is that Si has 4200 mAh/g of silicon, 10 times more than carbon.
Nanowires can offer shorter distance for Li diffusion (high power), good strain release and interface control (for better cycle life), and continuous electron transport pathway (high power). In-situ transmission electron microscopy (TEM). Double walled hollow structure provides stable solid electrolyte interphase (SEI). The outer surface is static. Amprius, where Prof. Cui is CTO, is a $6 million US government funded enterprise. Amprius China started in Nanjing, in April 2012.
Another example is printed energy storage devices on paper, textile and sponge. For low-cost scaffold, paper, textile and sponge, are used. There is cellulose paper and synthetic textile, besides sponge, as well.
There can be transparent batteries. It is actually very hard to develop those. The challenges for making a transparent battery are Al film, cathode, electrolyte, etc. An idea: dimension smaller than eye’s detection limit (50-100 um). Also, grids are well aligned.
Transparent conducting electrodes provide electrical and allow light to pass through. Apps include solar cells, etc. Indium tin oxide (ITO) has a low abundance of indium, brittleness when bent, and sputtering at high cost. Electrospinning of nanofibers is done for transparent electrodes. An example is the trough-shaped nanowires.
Yet another example is the water nanofilters for killing pathogens. The processes available for killing bacteria include chemical disinfection, UV disinfection, boiling, etc.
The first generation product is currently ready at Amprius. Amprius licensed the IP from Stanford. Stanford is also an investor in Amprius.