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Is GaN-on-Si disruptive technology?


The mass adoption of GaN on Si technology for LED applications remains uncertain. Opinions regarding the chance of success for LED-On-Si vary widely in the LED industry from unconditional enthusiasm to unjustified skepticism. Although significant improvements have been achieved, there are still some technology hurdles (such as performance, yields, CMOS compatibility, etc.).

The differential in substrate cost itself is not enough to justify the transition to GaN on Si technology. The main driver lies in the ability to manufacture in existing, depreciated CMOS fabs in 6” or 8”. For Yole Développement, if technology hurdles are cleared, GaN-on-Si LEDs will be adopted by some LED makers, but it will not become an industry standard.

Yole is more optimistic about the adoption of GaN on Si technology for power GaN devices. Contrary to LED industry, where GaN on Sapphire technology is the main stream and presents a challenging target, GaN on Si will dominate the GaN based power electronics applications. Although the GaN based devices remain more expensive than Si based devices, the overall cost of GaN device for some applications are expected to be lower three years from now according to some manufacturers.

Source:  Yole Développement, France.

Source: Yole Développement, France.

In 2020, GaN could reach more than 7 percent of the overall power device market and GaN on Si will capture more than 1.5 percent of the overall power substrate volume, representing more than 50 percent of the overall GaN on Si wafer volume, subjecting to the hypothesis that the 600 V devices would take off in 2014-2015.

GaN targets a $15 billion served available device market. GaN can power 4 families of devices and related applications. These are blue and green laser diodes, LEDs, power electronics and RF (see image).

Regarding GaN-on-Si LED, there will be no more than 5 percent penetration by 2020. As for GaN-on-GaN, it will be less than 2 percent. Yole considers that the leading proponents of LED-On-Si will successful and eventually adopt Si for all their manufacturing. Those include Bridgelux/Toshiba, Lattice Power, TSMC and Samsung. It expects that Silicon will capture 4.4 percent of LED manufacturing by 2020.

GaN wafer could break through the $2000 per 4” wafer barrier by 2017 or 2018, enabling limited adoption in applications that require high lumen output other small surfaces.

Round-up 2013: Best of semiconductors, electronics and solar


Virtex UltraScale device.

Virtex UltraScale device.

Friends, here’s a review of 2013! There have been the usual hits and misses, globally, while in India, the electronics and semiconductor industries really need to do a lot more! Enjoy, and here’s wishing everyone a Very Happy and Prosperous 2014! Be safe and stay safe!!

DEC. 2013
What does it take to create Silicon Valley!

How’s global semicon industry performing in sub-20nm era?

Xilinx announces 20nm All Programmable UltraSCALE portfolio

Dr. Wally Rhines: Watch out for 14/16nm technologies in 2014!

Outlook 2014: Xilinx bets big on 28nm

NOV. 2013
Indian electronics scenario still dull: Leaptech

Connecting intelligence today for connected world: ARM

India poses huge opportunity for DLP: TI

SEMICON Europa 2013: Where does Europe stand in 450mm path?

OCT. 2013
Apple’s done it again, wth iPad Air!

IEF 2013: New markets and opportunities in sub-20nm era!

SEPT. 2013
ST intros STM32F4 series high-performance Cortex-M4 MCUs

Great, India’s having fabs! But, is the tech choice right?

G450C

G450C

Now, India to have two semicon fabs!

Higher levels of abstraction growth area for EDA

AUG. 2013
Moore’s Law could come to an end within next decade: POET

What’s happening with 450mm: G450C update and status

300mm is the new 200mm!

JULY 2013
Xilinx tapes-out first UltraScale ASIC-class programmable architecture

JUNE 2013
EC’s goal: Reach 20 percent share in chip manufacturing by 2020!
Read more…

Non-mainstream packaging in MEMS, LED and power electronics


Source: Yole, France.

Source: Yole, France.

The number of MEMS and sensors going into mobile, consumer and gaming applications is expected to continue to skyrocket. As a result, OSAT and Wafer foundry players are getting more and more interest in MEMS module packaging, as volume and complexity of MEMS SiP modules is increasing dramatically, said Dr. Eric Mourier, Yole Developpement.

It implies that IDMs needs to find second source partnersand qualify some OSATs in order to secure their supply chain. Also, standardization(coming from both foundries, OSAT, WLP houses or substrate suppliers) is critical and necessary to implement in order to keep the packaging, assembly, and test cost of MEMS modules under control. There are many different players with different designs, and it’s not likely we’ll see one solution adopted by all the players.

As for wafer-level packaging (WLP) for LEDs, WLP has not been strongly deployed in the LED industry due to associated technical challenges. In the short-term, there is ESD integration in Si substrate. In the long-term, LED drivers could be integrated at the package level for Intelligent lighting. Ultimately, there are wafer-to-wafer manufacturing schemes for certain packaget types.

Real production of HB-LEDs with a mixed approach of WLP+through silicon vias (TSV) is just starting. There are some Taiwanese players such as TSMC, Xintec, Visera, Touch MicroTech and Sibdi, and South Korea-based LG Innotek. Additional players in the semiconductor and MEMS industry are seeking to enter the field.

New set of rules in IGBT market


The insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device. The main trends impacting IGBT include the power stack trend, revolution of Chinese IGBT, growth of IGBT use in consumer applications, and competition from SiC and GaN based devices, respectively.

According to Alexander Avron, Yole Developpement, current density of the IGBT has been multiplied by 3.5 in 20 years. IGBT technology is now very mature, using trenches and thin wafer. Wafer size for IGBT production is still growing and Infineon is currently the leader.

Infineon expects a cost advantage of 20-30 percent by increasing the wafer size from 8- to 12-inches. For Infineon, the 12-inch production line is for MOSFETSs, and they will probably produce IGBT 600V on thin wafer. Fairchild and IR prefer to remain at 8-inch.

Technology roadmap
A new generation release is always a low voltage product (600-900V). Main improvements have been in losses reduction. In the IGBT supply chain, vertically integrated companies are Japanese only, besides a few, like ABB. Only a few companies, like Danfoss, take advantage of doing module and inverter for motor drives. In a cost-driven market, there is not much competitive advantage in developing own module.

Trends impacting IGBT
Power stack trend - The need for more modularity and higher performance made components makers (active and passive) to join and create consortiums or JVs. It is trending toward more integration.

Revolution of the Chinese IGBT - First Chinese companies are starting to manufacture IGBTs using standard technology and low cost, perfect for a local market. Asian players are becoming a greater part of the IGBT market. While they do not make a lot of devices as yet, it is expected that they will quickly gain market shares in low cost local businesses.

Some new entrants include CSMC, Hua-Hong NEC, PSMC, BYD, Grace Semiconductor, Alpha & Omega Semiconductor, etc. Many Chinese companies are very close to or already able to manufacture their own IGBTs. This will grow and create a Chinese IGBT.

Growth of IGBT use in consumer applications - IGBTs are becoming more part of the consumer lifestyle. Renewable energies and EV/HEV are good examples. Pioneers of HV IGBT have the best market shares. Margin for HV IGBT modules is high. It is first in the EV/HEV and renewables markets. New markets are targeted by all players.

Source: Yole Developpement, France.

Source: Yole Developpement, France.

The ASP evolution of consumer markets has dropped down very fast as compared to the industrial markets. Also, DLB or direct lead bonding is a specific technology from Mitsubishi Electric to produce epoxy molded power modules for hybrid and electric cars. Mass production is targeted for 2013.

Competition from SiC and GaN - Next generation devices are becoming available. They will displace IGBT, but not at all the levels and in all the applications. Characteristics of GaN-based inverters are: they primarily target medium voltage apps (200-600V range). SiC diodes are already in production, mainly coupled with IGBT. Penetration of SiCs in wind turbines will happen later than expected.

As for the 2006-2020 power devices market forecast, Yole expects a more stable growth by 2020. There was an unanticipated slowdown in 2012. The market share in 2011 was Mitsubishi 27 percent, Infineon 23 percent, Fuji Electric 11 percent, etc. The IGBT market share was Infineon 35 percent, Mitsubishi 32 percent, Hitachi 12 percent, ABB 9 percent, respectively.

Yole estimates that at least 15 companies – foundries, fab lights and fabs — are working on IGBT development in China.

Focus on SiC power electronics business 2020


SiC is implemented in several power systems and is gaining momentum and credibility.

Yole Developpement stays convinced that the most pertinent market for SiC lands in high and very high voltage (more than 1.2kV), where applications are less cost-driven and where few incumbent technologies can’t compete in performance. This transition is on its way as several device/module makers have already planned such products at short term.

Even though EV/HEV skips SiC, the industry could expand among other apps. The only question remains: Is there enough business to make so many contenders live decently? Probably, yes, as green-techs are expanding fast, strongly requesting SiC. Newcomers should carefully manage strategy and properly size capex according to the market size.

Source: Yole Developpement, France.

Source: Yole Developpement, France.

Power electronics industry outlook
Electronics systems were worth $122 billion in 2012, and will likely grow to $144 billion by 2020 at a CAGR of 1.9 percent. Power inverters will grow from $41 billion in 2012 to over $70 billion by 2020 at a CAGR of 7.2 percent. Semiconductor power devices (discretes and modules) will grow from $12.5 billion in 2012 to $21.9 billion by 2020 at a CAGR of 7.9 percent. Power wafers will grow $912 million in 2012 to $1.3 billion by 2020 at a CAGR of 5.6 percent.

Looking at the power electronics market in 2012 by application and the main expectations to 2015, computer and office will account for 25 percent, industry and energy 24 percent, consumer electronics 18 percent, automotive and transport 17 percent, telecom 7 percent and others 9 percent.

The main trends expected for 2013-2015 are:
* Significant increase of automotive sector following EV and HEV ramp-up.
* Renewable energies and smart-grid implementation will drive industry sector ramp-up.
* Steady erosion of consumer segment due to pressure on price (however, volumes (units) will keep on increase).

The 2011 power devices sales by region reveals that overall, Asia is still the landing-field for more than 65 percent of power products. Most of the integrators are located in China, Japan or Korea. Europe is very dynamic as well with top players in traction, grid, PV inverter, motor control, etc. Asia leads with 39 percent, followed by Japan with 27 percent, Europe with 21 percent and North America with 13 percent.

The 2011 revenues by company/headquarter locations reveals that the big-names of the power electronics industry are historically from Japan. Nine companies of the top-20 are Japanese. There are very few power manufacturers in Asia except in Japan. Europe and US are sharing four of the top five companies. Japan leads with 42 percent, followed by Europe and North America with 28 percent each, respectively, and Asia with 2 percent.

Looking at the TAM comparison for SiC (and GaN), very high voltage, high voltage of 2kV and medium voltage of 1.2kV appear as a more comfortable area for SiC. The apps are less cost-driven and SiC added value is obvious. Low voltage from 0-900V is providing strong competition with traditional silicon technologies, SJ MOSFET and GaN. There are cost-driven apps.
Read more…

What’s the impact on CMOS image sensors industry in 2013?

January 23, 2013 3 comments

The CIS and camera module value chain in 2012 was ~$6.6 billion industry, of which ~$2 billion were from design overhead, selling, general and administrative, ~$3 billion from front-end, ~$0.4 billion from optical layers, ~$1.2 billion from BE/packaging, etc., according to Paul Danini, technology and market analyst, Yole Developpment, France.

Source: Yole, France.

Source: Yole Developpment, France.

There is also the camera module assembly and test segment. This segment has the integrated camera module suppliers, and the module assembly and test houses. The CMOS image sensor (CIS) shipments by market is set for a 11 percent CAGR growth from 2012-2017.

There was a $5.8 billion market in 2011 based on an estimated value of the first level packaged device. Samsung with 19 percent was the leader in 2011 revenue share, followed by Omnivision and Sony at 17 percent each, respectively, and Canon and Aptina Imaging at 10 percent each, respectively.

Samsung saw a 200 percent growth in smartphones. Omnivision had 50 percent growth from Apple iPad and iPhone4. Sony has grown with BSI CMOS in mobile phones. Canon pioneered CMOS in DSLR. Aptina Imaging is in high-performance specialty markets, and SETi and Galaxycore are gaining significant market share in Chinese mobile phone market.

There is a two-pronged approach to revenue growth and business strategy — race to volume and market share with CAGR >15 percent, and profit enhancement strategy with single-digit growth. Low price sensors are being offered by Galaxycore, Omnivision, SETi, and so on, while the likes of Sony, Samsung, etc. are plying innovative high-end sensors (>5MP).

A look at the manufacturing environment in 2012 shows 25 different CIS players and 40 separate CMOS image sensor lines globally. The 2011 CIS wafer production by region for 2.5M 8″ eq. wspy was led by Japan at 31 percent, followed by Korea at 27 percent, Taiwan at 24 percent and Europe at 15 percent. From 2013 onward, Japan will maintain its lead while Taïwan and China will increase their share.

What’s going to happen?
So, what’s happening in the final markets? The keys to success are either Chinese and Taïwanese foundries, and simple designs or leading edge R&D such as 3D stacking, BSI, 3D imaging and high dynamic range. And, what’s the minimum requirement? It is 12-inch wafer production and backside illumination. These could be a necessity in the near future in the consumer market.

In the high-end applications, while emerging applications are boosting growth, the competition keeps getting stronger. So, what happens in the high-end market segments? There is an opportunity for CIS players that struggle in the mass consumer market, as the CCD to CMOS shift is accelerating at -16 percent CAGR of CCD sales.
Read more…

New sapphire apps can trigger an investment cycle!

December 10, 2012 1 comment

Too many new entrants on sapphire for LED market with unrealistic capacity plans. Most underestimated the technical challenges! Prices are likely to remain low through 2013. Many new entrants will fail in 2013-2014: rationalization (M&A, bankruptcy, attrition). In the long term, vertical integration is desirable to avoid margin stacking, said Eric Virey, senior market and technology analyst, LED Materials and Sevices, Yole Developpement. He was presenting a seminar on how new sapphire applications can trigger an investment cycle.

According to him, adoption of CFL and LED stretches the replacement cycle and cannibalizes lamp volume sales. As for LED manufacturing capacity, with respect to nitride MOCVD reactors, 2009 and 2010 saw increases in Taiwan and Korea in late driven by LCD display market. The years 2010-2012 saw phenomenal increase in China. Government subsidies are likely to build up epitaxy capacity in the mainland, which should be more than $1.5 billion.

YoleCurrently there are ~110 companies with epitaxy capacity. Many will likely disappear! The current excess MOCVD capacity will be fully absorbed by mid-2014. The MOCVD reactor installation will resume mid-late 2013. The global MOCVD utilization rate is 61 percent. There is wide variability between leaders and tier 2 players in China. The Q4-2012 LED sapphire consumption was worth 3.9 million two inch equivalent per month.

As for companies in sapphire wafer, 130+ companies are involved in the sapphire substrate (established or development stage). Less than 30 currently are deriving meaningful revenue from LED substrates. The capacity is ~80 percent higher than demand. It could get worse in 2013! Prices are likely to remain low. Many new entrants will disappear, and others will scale back. A few will succeed.

Conditions for survival through 2013 include, having a lot of cash, be qualified in supply chain, achieve <$4/mm cost (2” basis), and serving other market could be a plus. As for wafer price trends, the finished wafers following similar trends. The 6” is now offered for <$200, but price can vary significantly based on specifications. There are said to be simulated 4” core cost structure for various manufacturers.
Read more…

MEMS to be $21 billion market by 2017: Yole


MEMS update: Source: Yole

MEMS update: Source: Yole

The MEMS market is on a growing curve again, and many changes are happening on the technical side, business model side and supply chain side. MEMS will continue to see steady, sustainable double digit growth for the next six years: 13 per cent CAGR in revenues and 20 per cent CAGR in units. MEMS will grow to $21 billion market by 2017.

Every year brings new business to the MEMS landscape. Combo sensors are coming. The MEMS market is still very fragmented, with a number of high volume MEMS applications still limited today. However, a whole range of new MEMS devices has now reached the market and new ‘emerging MEMS’ devices are coming..

MEMS applicable to mobile devices (RF MEMS switches, oscillators, auto-focus) have the possibility to ramp up to large volumes quickly. Growth will also come from existing sensors that are expanding into new market spaces: e.g. pressure sensors for consumer.

Consumer/mobile applications are driving about 50 per cent of the total volume. Telecom and medical applications will grow faster with expected CAGR of ~20 per cent in the next five years. Industrial MEMS applications represent significant opportunities with grow of ~13 per cent likely.

MEMS in 2011
Four devices represented over 50 per cent of units shipped in 2011. Microphones, accelerometers, gyroscopes and magnetometers represented more than 50 per cent of MEMS units shipped in 2011.

Accelerometer, gyroscope and electronic compass growth is coming from the detection of movement, which is reaching every applications, from mobile phones to pacemakers to smart munitions. Microphone has found a sweet spot in the mobile phone business, replacing the electric condenser type of microphones.

All these devices are about to be combined with other sensors and electronic functions/processing in order to add more value. Multi-microphone arrays with noise cancellation functionalities are now a new feature in smartphones. Accelerometers plus gyroscopes plus electronic compasses are being combined (in a SiP package, in the near future, in silicon SoC) to bring a higher level of functionality at even lower costs.

Invensense achieved the same MEMS size when moving from 2-axis to 3-axis gyros (ITG-3200). As for MEMS accelerometer roadmap, new packaging concepts (such as metal-to-metal wafer bonding, WLP/TSV technologies) are driving the ‘Moore law’ of the MEMS technology roadmap.

In an example of STM accelerometer using TSV technology, by removing the area reserved for I/O pads, the TSV process allows the MEMS die area to be shrinked by 25 per cent compared to the standard accelerometer. However, TSV adds major manufacturing changes that increase the final wafer cost by about $90. The wafer extra cost cumulated with a shrinked MEMS die, makes the final die cost still competitive.

In the 2011 MEMS ranking of the top 30 players, TI, STMicro, HP and Bosch are the ‘big 4′ players with annual revenues of > $700 million. The top 30 accounts for ~80 per cent of total MEMS market. More than 25 players generate annual revenues from $50 million to $300 million.

As for 2011 MEMS foundry rankings, some MEMS IDMs have been successful in developing a MEMS foundry business beyond internal needs. STMicro is by far the no. 1 with key customers such as HP (related to ink-jet MEMS manufacturing). Sony has Knowles’ silicon microphone wafer manufacturing business.

Pure play MEMS foundries include Silex (SW), DALSA (CA), apm (TW), IMT (US), tMt (TW) and DNP (JP). CMOS wafer foundries are entering the MEMS manufacturing space with TSMC (TW), umc (TW), Globalfoundries (SG), SMIC (CH), X-Fab (GE) and Semefab (UK).

The 2011 MEMS foundry services accounted for ~6 per cent of the total MEMS market ($623 million). In 2010, the ratio was similar. Now, there are more and more fabless companies in the MEMS space! There are over 70 fabless MEMS companies.
Read more…

WLCSP market and industrial trends


WLCSP technology and industrial roadmap. Source: Yole Developpement, France.

WLCSP technology and industrial roadmap. Source: Yole Developpement, France.

According to Yole Developpement, France, the number of devices packaged with ‘fan-in WLCSP will exceed 25 billion units in 2012, exceeding more than 2 million 300mm equivalent wafers. Yole recently held a seminar on wafer level chip scale package (WLCSP).

Yole estimates the fan-in WLCSP industry value to be over $1.9 billion in 2012. This includes wafer level services (including test) and die level services, as well as the service margin. This market value is expected to keep on growing at a 2010-2016 CAGR of 12 percent, despite decreasing prices. However it does not grow equally across all device types.

The use of fan-in WLCSP for a given application tends to be more and more standardized: it is now clear, for example, that the penetration rate of fan-in WLCSP for connectivity devices in handsets is close to 100 percent, while some players still proposed QFN or BGA solutions a couple of years ago for this same application.

The maximum die size increased recently, and it is now common place to find 36mm² fan-in WLCSP devices in smartphones and tablets. The world record is 50mm² with 309 balls. Any fan-in WLCSP device larger than 4mm in side needs to be underfilled on the PCB. According to Yole, fan-in WLCSP is a maturing technology and market. It still grows faster than the average semiconductor packaging market mainly thanks to the fast growth rates of smartphones and tablet PCs in which WLCSP considerably helps save space and costs. Read more…

Future material and devices for power electronics

December 15, 2011 1 comment

Alexandre Avron, market analyst in power electronics, Yole Développement, provided a briefing on semiconductor material’s potential through an analysis of devices and systems for power electronics.

According to him,  there is still a bright future for silicon. It will keep good market share until at least 2016 and even further, being cost competitive and very standard. On the other side, SiC is more applied to higher voltages. These are the smallest markets, but probably the one requiring SiC properties the most. PV inverters and EV/HEV are at intermediary voltage levels, they could both be targeted by SiC and GaN, this makes the predictions very difficult.

No technical aspects helps in knowing which material will be more used. They have their advantages and drawbacks, and both deserve their place. Prediction must be based on developments advancements.

The points to watch about SiC and GaN devices include: samples availability is a main point for future integration, reliability is also a main concern, especially for SiC devices, voltage capability seems to keep GaN at smaller power, and cost: GaN appears to be potentially cheaper, as it is based on Si wafers and can be CMOS compatible. Read more…

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