The mass adoption of GaN on Si technology for LED applications remains uncertain. Opinions regarding the chance of success for LED-On-Si vary widely in the LED industry from unconditional enthusiasm to unjustified skepticism. Although significant improvements have been achieved, there are still some technology hurdles (such as performance, yields, CMOS compatibility, etc.).
The differential in substrate cost itself is not enough to justify the transition to GaN on Si technology. The main driver lies in the ability to manufacture in existing, depreciated CMOS fabs in 6” or 8”. For Yole Développement, if technology hurdles are cleared, GaN-on-Si LEDs will be adopted by some LED makers, but it will not become an industry standard.
Yole is more optimistic about the adoption of GaN on Si technology for power GaN devices. Contrary to LED industry, where GaN on Sapphire technology is the main stream and presents a challenging target, GaN on Si will dominate the GaN based power electronics applications. Although the GaN based devices remain more expensive than Si based devices, the overall cost of GaN device for some applications are expected to be lower three years from now according to some manufacturers.
In 2020, GaN could reach more than 7 percent of the overall power device market and GaN on Si will capture more than 1.5 percent of the overall power substrate volume, representing more than 50 percent of the overall GaN on Si wafer volume, subjecting to the hypothesis that the 600 V devices would take off in 2014-2015.
GaN targets a $15 billion served available device market. GaN can power 4 families of devices and related applications. These are blue and green laser diodes, LEDs, power electronics and RF (see image).
Regarding GaN-on-Si LED, there will be no more than 5 percent penetration by 2020. As for GaN-on-GaN, it will be less than 2 percent. Yole considers that the leading proponents of LED-On-Si will successful and eventually adopt Si for all their manufacturing. Those include Bridgelux/Toshiba, Lattice Power, TSMC and Samsung. It expects that Silicon will capture 4.4 percent of LED manufacturing by 2020.
GaN wafer could break through the $2000 per 4” wafer barrier by 2017 or 2018, enabling limited adoption in applications that require high lumen output other small surfaces.
Future Horizons hosted the 22nd Annual International Electronics Forum, in association with IDA Ireland, on Oct. 2-4, 2013, at Dublin, Blanchardstown, Ireland. The forum was titled ‘New Markets and Opportunities in the Sub-20nm Era: Business as Usual OR It’s Different This Time.” Here are excerpts from some of the sessions. Those desirous of finding out much more should contact Malcolm Penn, CEO, Future Horizons.
The global interest in graphene research has facilitated our understanding of this rather unique material. However, the transition from the laboratory to factory has hit some challenging obstacles. In this talk I will review the current state of graphene research, focusing on the techniques which allow large scale production.
I will then discuss various aspects of our research which is based on more complex structures beyond graphene. Firstly, hexagonal boron nitride can be used as a thin dielectric material where electrons can tunnel through. Secondly, graphene-boron nitride stacks can be used as tunnelling transistor devices with promising characteristics. The same devices show interesting physics, for example, negative differential conductivity can be found at higher biases. Finally, graphene stacked with thin semiconducting layers which show promising results in photodetection.
I will conclude by speculating the fields where graphene may realistically find applications and discuss the role of the National Graphene Institute in commercializing graphene.
The key challenge for future high-end computing chips is energy efficiency in addition to traditional challenges such as yield/cost, static power, data transfer. In 2020, in order to maintain at an acceptable level the overall power consumption of all the computing systems, a gain in term of power efficiency of 1000 will be required.
To reach this objective, we need to work not only at process and technology level, but to propose disruptive multi-processor SoC architecture and to make some major evolutions on software and on the development of
applications. Some key semiconductor technologies will definitely play a key role such as: low power CMOS technologies, 3D stacking, silicon photonics and embedded non-volatile memory.
To reach this goal, the involvement of semiconductor industries will be necessary and a new ecosystem has to be put in place for establishing stronger partnerships between the semiconductor industry (IDM, foundry), IP provider, EDA provider, design house, systems and software industries.
This presentation looks at the development of the semiconductor and electronics industries from an African perspective, both globally and in Africa. Understanding the challenges that are associated with the wide scale adoption of new electronics in the African continent.
Electronics have taken over the world, and it is unthinkable in today’s modern life to operate without utilising some form of electronics on a daily basis. Similarly, in Africa the development and adoption of electronics and utilisation of semiconductors have grown exponentially. This growth on the African continent was due to the rapid uptake of mobile communications. However, this has placed in stark relief the challenges facing increased adoption of electronics in Africa, namely power consumption.
This background is central to the thesis that the industry needs to look at addressing the twin challenges of low powered and low cost devices. In Africa there are limits to the ability to frequently and consistently charge or keep electronics connected to a reliable electricity grid. Therefore, the current advances in electronics has resulted in the power industry being the biggest beneficiary of the growth in the adoption of electronics.
What needs to be done is for the industry to support and foster research on this subject in Africa, working as a global community. The challenge is creating electronics that meet these cost and power challenges. Importantly, the solution needs to be driven by the semiconductor industry not the power industry. Focus is to be placed on operating in an off-grid environment and building sustainable solutions to the continued challenge of the absence of reliable and available power.
It is my contention that Africa, as it has done with the mobile communications industry and adoption of LED lighting, will leapfrog in terms of developing and adopting low powered and cost effective electronics.
Personalized, preventive, predictive and participatory healthcare is on the horizon. Many nano-electronics research groups have entered the quest for more efficient health care in their mission statement. Electronic systems are proposed to assist in ambulatory monitoring of socalled ‘markers’ for wellness and health.
New life science tools deliver the prospect of personal diagnostics and therapy in e.g., the cardiac, neurological and oncology field. Early diagnose, detailed and fast screening technology and companioning devices to deliver the evidence of therapy effectiveness could indeed stir a – desperately needed – healthcare revolution. This talk addresses the exciting trends in ‘PPPP’ health care and relates them to an innovation roadmap in process technology, electronic circuits and system concepts.
There are more available solutions than ever in power devices, according to Alexandre Avron, market and technology analyst, Yole Développement. The landscape is moving, and its moving quite fast, from every region of the world.
There are many opportunities for power device manufacturers. This is the time for strong strategic planning and making the best choices. He was speaking at a seminar on the power semiconductor devices industry, in Lyon, France.
IGBTs and SJ MOSFETs
Silicon is not dead and will still live for a long time. Standard device design are slowly disappearing (planar IGBT, planar MOSFET). IGBT and SJ MOS are highly mature technologies. Rules of competition are evolving.
Historic players need to keep on innovating. New entrants have a different business model: there are more and more foundries, with fab-less and fab-light players. IGBT is still a key asset: master and secure IGBT supply is necessary for system makers. SJ MOSFETS will be used in more and more systems, taking market shares to planar MOSFET.
About SiC and GaN, there is still a big question mark: Where and when? With time, it is becoming clearer. SiC will target medium and high power. From our point of view, medium power (1200V base) is a mean to arrive to high power (+3.3kV). R&D has to go through this to reach higher voltage. The main issue is still on current ratings (having a high impact on cost).
GaN will target low and medium power, and will probably allow extraordinary power supplies designs (Tiny supplies, very high frequency systems). It is almost ready for 600V, but not yet at 1200V. It leaves room for SiC to develop and expand. Major players are involved on both fields — SiC and GaN. They need to be present on both domains, as there will be an overlap, but the split is unclear: we will probably experience a very fine segmentation, not only by voltage or current, but also by frequency, ruggedness, system size, temperature of operation or maybe culture or history.
SiC is now here. First full SiC PV inverters are available. First field tests for SiC in rail traction is ongoing. GaN is under qualification. According to the most advanced players, 600V GaN devices samples are tested by system makers.