Archive for the ‘III-V high mobility semiconductors’ Category

Round-up 2013: Best of semiconductors, electronics and solar

December 31, 2013 Comments off

Virtex UltraScale device.

Virtex UltraScale device.

Friends, here’s a review of 2013! There have been the usual hits and misses, globally, while in India, the electronics and semiconductor industries really need to do a lot more! Enjoy, and here’s wishing everyone a Very Happy and Prosperous 2014! Be safe and stay safe!!

DEC. 2013
What does it take to create Silicon Valley!

How’s global semicon industry performing in sub-20nm era?

Xilinx announces 20nm All Programmable UltraSCALE portfolio

Dr. Wally Rhines: Watch out for 14/16nm technologies in 2014!

Outlook 2014: Xilinx bets big on 28nm

NOV. 2013
Indian electronics scenario still dull: Leaptech

Connecting intelligence today for connected world: ARM

India poses huge opportunity for DLP: TI

SEMICON Europa 2013: Where does Europe stand in 450mm path?

OCT. 2013
Apple’s done it again, wth iPad Air!

IEF 2013: New markets and opportunities in sub-20nm era!

SEPT. 2013
ST intros STM32F4 series high-performance Cortex-M4 MCUs

Great, India’s having fabs! But, is the tech choice right?



Now, India to have two semicon fabs!

Higher levels of abstraction growth area for EDA

AUG. 2013
Moore’s Law could come to an end within next decade: POET

What’s happening with 450mm: G450C update and status

300mm is the new 200mm!

JULY 2013
Xilinx tapes-out first UltraScale ASIC-class programmable architecture

JUNE 2013
EC’s goal: Reach 20 percent share in chip manufacturing by 2020!
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III-V high mobility semiconductors for advanced CMOS apps

October 30, 2012 Comments off

Clement Merckling, IMEC, Belgium, presented on the epitaxial growth and in-situ passivation requirements for III-V high mobility semiconductors for advanced CMOS applications at the Semicon Europa in Dresden, Germany.

The motivations for III-V MOS transistors include higher electron carrier mobility (@ low-field), more efficient source injection, smaller energy bandgap, VDD scaling, band engineering capabilities, lower temperature processing, high-K gate first process possible and 3D compatible architecture.



The International Technology Roadmap for Semiconductors (ITRS) believes in Ge and III-V. IMEC epi + in-situ oxide ‘tool park’ involves MBE (molecular beam epitaxy) and MOVPE (metalorganic vapour phase epitaxy) III-V growth techniques. The III-V EPI is clustered with in-situ oxide capabilities.

The AIXTRON Crius 300mm looks at III-V selective epitaxial growth (III-As and III-P). The AMAT/RIBER III-V logic cluster 300mm looks at the III-V selective epitaxial growth (III-As and III-P), in-situ surface analysis, handled by RIBER ISA 300, and oxide (ALD and MBE) chambers in-situ. The RIBER MBE 49 cluster 200mm looks at the III-V solid source epitaxy (III-As and III-Sb) oxide chamber in-situ.

Main issues and challenges
Main issues for III-V integration include III-V integration on Si platform. There are all sorts of crystalline defects. Next, gate stack formation on MOS. It is much more difficult to passivate interfaces. Smaller bandgap, means, an increased Ioff due to band-to-band-tunneling.

Challenges with III-V heteroepitaxy on Si include Lattice mismatch, anti-phase boundaries (APB), mismatch stress relaxation and related defects such as dislocations at interface, and extended defects (threading arms, SFs). There are other defects caused at isolation interfaces, such as twins, stacking faults, facets, etc. Finally, there is interdiffusion at heterogeneous interfaces.

However, it is possible to achieve high quality heteroepitaxy by direct epitaxy using metamorphic buffer and defect confinement and wafers bonding. Strain relaxed buffer (SRB) is among the options for III-V materials integration at imec.

There can be InGaAs metamorphic buffer, with the MBE growth of low defect density and device quality III-V heterostructure using a suitable metamorphic buffer. Or, there can be III-Sb on Si by SS-MBE, that provides a route to relax III-V.

Defect confinement is possible via ‘necking effect’. The selective area growth (SAG) of III-V compounds via MOVPE (or CBE ?) means the defects are trapped at trench edges. The other way is dislocation trapping in narrow STI trenches for aspect ratio >2. There is low defect density material in the upper part of the trench.

Elimination of APBs for on-axis Si (001), Si recess engineering, is possible either via rounded-Ge surface or V-grooved surface. In the rounded-Ge surface, step creation is done by surface engineering of a Ge seed layer. Double steps on a Ge surface are more stable and easy to form with a lower thermal budget than on Si.

In V-grooved surface, (111) surface is obtained either by KOH or TMAH wet etching. Growth inside a pre-defined Si {111} enclosure promote initial III-V nucleation uniformity.

The ‘necking effect’ approach presents its own challenges. One, perpendicular view, where there is efficient defect necking effect with side wall and parallel view, which allows viewing high defect density.
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