The mass adoption of GaN on Si technology for LED applications remains uncertain. Opinions regarding the chance of success for LED-On-Si vary widely in the LED industry from unconditional enthusiasm to unjustified skepticism. Although significant improvements have been achieved, there are still some technology hurdles (such as performance, yields, CMOS compatibility, etc.).
The differential in substrate cost itself is not enough to justify the transition to GaN on Si technology. The main driver lies in the ability to manufacture in existing, depreciated CMOS fabs in 6” or 8”. For Yole Développement, if technology hurdles are cleared, GaN-on-Si LEDs will be adopted by some LED makers, but it will not become an industry standard.
Yole is more optimistic about the adoption of GaN on Si technology for power GaN devices. Contrary to LED industry, where GaN on Sapphire technology is the main stream and presents a challenging target, GaN on Si will dominate the GaN based power electronics applications. Although the GaN based devices remain more expensive than Si based devices, the overall cost of GaN device for some applications are expected to be lower three years from now according to some manufacturers.
In 2020, GaN could reach more than 7 percent of the overall power device market and GaN on Si will capture more than 1.5 percent of the overall power substrate volume, representing more than 50 percent of the overall GaN on Si wafer volume, subjecting to the hypothesis that the 600 V devices would take off in 2014-2015.
GaN targets a $15 billion served available device market. GaN can power 4 families of devices and related applications. These are blue and green laser diodes, LEDs, power electronics and RF (see image).
Regarding GaN-on-Si LED, there will be no more than 5 percent penetration by 2020. As for GaN-on-GaN, it will be less than 2 percent. Yole considers that the leading proponents of LED-On-Si will successful and eventually adopt Si for all their manufacturing. Those include Bridgelux/Toshiba, Lattice Power, TSMC and Samsung. It expects that Silicon will capture 4.4 percent of LED manufacturing by 2020.
GaN wafer could break through the $2000 per 4” wafer barrier by 2017 or 2018, enabling limited adoption in applications that require high lumen output other small surfaces.
The number of MEMS and sensors going into mobile, consumer and gaming applications is expected to continue to skyrocket. As a result, OSAT and Wafer foundry players are getting more and more interest in MEMS module packaging, as volume and complexity of MEMS SiP modules is increasing dramatically, said Dr. Eric Mourier, Yole Developpement.
It implies that IDMs needs to find second source partnersand qualify some OSATs in order to secure their supply chain. Also, standardization(coming from both foundries, OSAT, WLP houses or substrate suppliers) is critical and necessary to implement in order to keep the packaging, assembly, and test cost of MEMS modules under control. There are many different players with different designs, and it’s not likely we’ll see one solution adopted by all the players.
As for wafer-level packaging (WLP) for LEDs, WLP has not been strongly deployed in the LED industry due to associated technical challenges. In the short-term, there is ESD integration in Si substrate. In the long-term, LED drivers could be integrated at the package level for Intelligent lighting. Ultimately, there are wafer-to-wafer manufacturing schemes for certain packaget types.
Real production of HB-LEDs with a mixed approach of WLP+through silicon vias (TSV) is just starting. There are some Taiwanese players such as TSMC, Xintec, Visera, Touch MicroTech and Sibdi, and South Korea-based LG Innotek. Additional players in the semiconductor and MEMS industry are seeking to enter the field.
The insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device. The main trends impacting IGBT include the power stack trend, revolution of Chinese IGBT, growth of IGBT use in consumer applications, and competition from SiC and GaN based devices, respectively.
According to Alexander Avron, Yole Developpement, current density of the IGBT has been multiplied by 3.5 in 20 years. IGBT technology is now very mature, using trenches and thin wafer. Wafer size for IGBT production is still growing and Infineon is currently the leader.
Infineon expects a cost advantage of 20-30 percent by increasing the wafer size from 8- to 12-inches. For Infineon, the 12-inch production line is for MOSFETSs, and they will probably produce IGBT 600V on thin wafer. Fairchild and IR prefer to remain at 8-inch.
A new generation release is always a low voltage product (600-900V). Main improvements have been in losses reduction. In the IGBT supply chain, vertically integrated companies are Japanese only, besides a few, like ABB. Only a few companies, like Danfoss, take advantage of doing module and inverter for motor drives. In a cost-driven market, there is not much competitive advantage in developing own module.
Trends impacting IGBT
Power stack trend – The need for more modularity and higher performance made components makers (active and passive) to join and create consortiums or JVs. It is trending toward more integration.
Revolution of the Chinese IGBT – First Chinese companies are starting to manufacture IGBTs using standard technology and low cost, perfect for a local market. Asian players are becoming a greater part of the IGBT market. While they do not make a lot of devices as yet, it is expected that they will quickly gain market shares in low cost local businesses.
Some new entrants include CSMC, Hua-Hong NEC, PSMC, BYD, Grace Semiconductor, Alpha & Omega Semiconductor, etc. Many Chinese companies are very close to or already able to manufacture their own IGBTs. This will grow and create a Chinese IGBT.
Growth of IGBT use in consumer applications – IGBTs are becoming more part of the consumer lifestyle. Renewable energies and EV/HEV are good examples. Pioneers of HV IGBT have the best market shares. Margin for HV IGBT modules is high. It is first in the EV/HEV and renewables markets. New markets are targeted by all players.
The ASP evolution of consumer markets has dropped down very fast as compared to the industrial markets. Also, DLB or direct lead bonding is a specific technology from Mitsubishi Electric to produce epoxy molded power modules for hybrid and electric cars. Mass production is targeted for 2013.
Competition from SiC and GaN – Next generation devices are becoming available. They will displace IGBT, but not at all the levels and in all the applications. Characteristics of GaN-based inverters are: they primarily target medium voltage apps (200-600V range). SiC diodes are already in production, mainly coupled with IGBT. Penetration of SiCs in wind turbines will happen later than expected.
As for the 2006-2020 power devices market forecast, Yole expects a more stable growth by 2020. There was an unanticipated slowdown in 2012. The market share in 2011 was Mitsubishi 27 percent, Infineon 23 percent, Fuji Electric 11 percent, etc. The IGBT market share was Infineon 35 percent, Mitsubishi 32 percent, Hitachi 12 percent, ABB 9 percent, respectively.
Yole estimates that at least 15 companies – foundries, fab lights and fabs — are working on IGBT development in China.
SiC is implemented in several power systems and is gaining momentum and credibility.
Yole Developpement stays convinced that the most pertinent market for SiC lands in high and very high voltage (more than 1.2kV), where applications are less cost-driven and where few incumbent technologies can’t compete in performance. This transition is on its way as several device/module makers have already planned such products at short term.
Even though EV/HEV skips SiC, the industry could expand among other apps. The only question remains: Is there enough business to make so many contenders live decently? Probably, yes, as green-techs are expanding fast, strongly requesting SiC. Newcomers should carefully manage strategy and properly size capex according to the market size.
Power electronics industry outlook
Electronics systems were worth $122 billion in 2012, and will likely grow to $144 billion by 2020 at a CAGR of 1.9 percent. Power inverters will grow from $41 billion in 2012 to over $70 billion by 2020 at a CAGR of 7.2 percent. Semiconductor power devices (discretes and modules) will grow from $12.5 billion in 2012 to $21.9 billion by 2020 at a CAGR of 7.9 percent. Power wafers will grow $912 million in 2012 to $1.3 billion by 2020 at a CAGR of 5.6 percent.
Looking at the power electronics market in 2012 by application and the main expectations to 2015, computer and office will account for 25 percent, industry and energy 24 percent, consumer electronics 18 percent, automotive and transport 17 percent, telecom 7 percent and others 9 percent.
The main trends expected for 2013-2015 are:
* Significant increase of automotive sector following EV and HEV ramp-up.
* Renewable energies and smart-grid implementation will drive industry sector ramp-up.
* Steady erosion of consumer segment due to pressure on price (however, volumes (units) will keep on increase).
The 2011 power devices sales by region reveals that overall, Asia is still the landing-field for more than 65 percent of power products. Most of the integrators are located in China, Japan or Korea. Europe is very dynamic as well with top players in traction, grid, PV inverter, motor control, etc. Asia leads with 39 percent, followed by Japan with 27 percent, Europe with 21 percent and North America with 13 percent.
The 2011 revenues by company/headquarter locations reveals that the big-names of the power electronics industry are historically from Japan. Nine companies of the top-20 are Japanese. There are very few power manufacturers in Asia except in Japan. Europe and US are sharing four of the top five companies. Japan leads with 42 percent, followed by Europe and North America with 28 percent each, respectively, and Asia with 2 percent.
Looking at the TAM comparison for SiC (and GaN), very high voltage, high voltage of 2kV and medium voltage of 1.2kV appear as a more comfortable area for SiC. The apps are less cost-driven and SiC added value is obvious. Low voltage from 0-900V is providing strong competition with traditional silicon technologies, SJ MOSFET and GaN. There are cost-driven apps.
The CIS and camera module value chain in 2012 was ~$6.6 billion industry, of which ~$2 billion were from design overhead, selling, general and administrative, ~$3 billion from front-end, ~$0.4 billion from optical layers, ~$1.2 billion from BE/packaging, etc., according to Paul Danini, technology and market analyst, Yole Developpment, France.
There is also the camera module assembly and test segment. This segment has the integrated camera module suppliers, and the module assembly and test houses. The CMOS image sensor (CIS) shipments by market is set for a 11 percent CAGR growth from 2012-2017.
There was a $5.8 billion market in 2011 based on an estimated value of the first level packaged device. Samsung with 19 percent was the leader in 2011 revenue share, followed by Omnivision and Sony at 17 percent each, respectively, and Canon and Aptina Imaging at 10 percent each, respectively.
Samsung saw a 200 percent growth in smartphones. Omnivision had 50 percent growth from Apple iPad and iPhone4. Sony has grown with BSI CMOS in mobile phones. Canon pioneered CMOS in DSLR. Aptina Imaging is in high-performance specialty markets, and SETi and Galaxycore are gaining significant market share in Chinese mobile phone market.
There is a two-pronged approach to revenue growth and business strategy — race to volume and market share with CAGR >15 percent, and profit enhancement strategy with single-digit growth. Low price sensors are being offered by Galaxycore, Omnivision, SETi, and so on, while the likes of Sony, Samsung, etc. are plying innovative high-end sensors (>5MP).
A look at the manufacturing environment in 2012 shows 25 different CIS players and 40 separate CMOS image sensor lines globally. The 2011 CIS wafer production by region for 2.5M 8″ eq. wspy was led by Japan at 31 percent, followed by Korea at 27 percent, Taiwan at 24 percent and Europe at 15 percent. From 2013 onward, Japan will maintain its lead while Taïwan and China will increase their share.
What’s going to happen?
So, what’s happening in the final markets? The keys to success are either Chinese and Taïwanese foundries, and simple designs or leading edge R&D such as 3D stacking, BSI, 3D imaging and high dynamic range. And, what’s the minimum requirement? It is 12-inch wafer production and backside illumination. These could be a necessity in the near future in the consumer market.
In the high-end applications, while emerging applications are boosting growth, the competition keeps getting stronger. So, what happens in the high-end market segments? There is an opportunity for CIS players that struggle in the mass consumer market, as the CCD to CMOS shift is accelerating at -16 percent CAGR of CCD sales.
Too many new entrants on sapphire for LED market with unrealistic capacity plans. Most underestimated the technical challenges! Prices are likely to remain low through 2013. Many new entrants will fail in 2013-2014: rationalization (M&A, bankruptcy, attrition). In the long term, vertical integration is desirable to avoid margin stacking, said Eric Virey, senior market and technology analyst, LED Materials and Sevices, Yole Developpement. He was presenting a seminar on how new sapphire applications can trigger an investment cycle.
According to him, adoption of CFL and LED stretches the replacement cycle and cannibalizes lamp volume sales. As for LED manufacturing capacity, with respect to nitride MOCVD reactors, 2009 and 2010 saw increases in Taiwan and Korea in late driven by LCD display market. The years 2010-2012 saw phenomenal increase in China. Government subsidies are likely to build up epitaxy capacity in the mainland, which should be more than $1.5 billion.
Currently there are ~110 companies with epitaxy capacity. Many will likely disappear! The current excess MOCVD capacity will be fully absorbed by mid-2014. The MOCVD reactor installation will resume mid-late 2013. The global MOCVD utilization rate is 61 percent. There is wide variability between leaders and tier 2 players in China. The Q4-2012 LED sapphire consumption was worth 3.9 million two inch equivalent per month.
As for companies in sapphire wafer, 130+ companies are involved in the sapphire substrate (established or development stage). Less than 30 currently are deriving meaningful revenue from LED substrates. The capacity is ~80 percent higher than demand. It could get worse in 2013! Prices are likely to remain low. Many new entrants will disappear, and others will scale back. A few will succeed.
Conditions for survival through 2013 include, having a lot of cash, be qualified in supply chain, achieve <$4/mm cost (2” basis), and serving other market could be a plus. As for wafer price trends, the finished wafers following similar trends. The 6” is now offered for <$200, but price can vary significantly based on specifications. There are said to be simulated 4” core cost structure for various manufacturers.