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Metro450 Conference 2014 discusses all things 450mm wafers!


Thanks to the Enable450 newsletter, sent out by Malcolm Penn, CEO, Future Horizons, here is a piece on the Metro450 Conference 2014, held earlier this year in Israel.

450Metro450 is an Israel-based consortium with the goal of helping the metrology companies advance in their fields. The consortium’s members include metrology and related companies, as well as academics who support these companies by performing basic research.

The conference was sponsored by the Israeli Chief Scientist Office, by Applied Materials Israel and by Intel. There were several goals for the conference: to provide an opportunity for industry leaders as well as academicians to meet and discuss the latest developments in the world of metrology, to present these advances to audiences which would normally not be privy to such information, and to learn more about the international effort in 450mm wafer technology.

Over 200 people attended this conference from Israeli companies and academia, as well as from Europe and the United States. Israeli companies included Applied Materials, Jordan Valley, Nova, KLA, Zeiss Israel, and others. Academic members included researchers from the leading Israeli universities, including the Technion, Tel-Aviv U. and Haifa U. European companies were represented by ENIAC, as well as large corporations such as ASML as well SME-based companies. The G450C consortium, based in Albany, N.Y. was also well represented at this conference.

Some of the highlights of the conference included scientific discussions of different metrology methods, and their adjunct requirements, such as improved rapid wafer movement, improved sampling methods and fast computing. Presentations also included an overview of the advances necessary to move the industry forward, optical CD metrology, x-ray metrology, and novel piezo-based wafer movement.

A panel discussed various broad industry trends, including the timeline of 450mm wafers, European programs and the Israeli programs. International speakers discussed the European technology model, risk mitigation of 450 through collaborations, 450 collaborative projects under ENIAC, 450mm wafer movement challenges and metrology challenges beyond 14nm.

This second annual Metro450 conference took place this January at the Technion, Israel.

SEMICON Europa 2013: Where does Europe stand in 450mm path?

November 1, 2013 Comments off

SEMICON Europa was recently held in Dresden, Germany on Oct. 8-10, 2013. I am extremely grateful to Malcolm Penn, chairman and CEO, Future Horizons for sharing this information with me.

Semicon Europa 2013SEMICON Europa included a supplier exhibition where quite a few 450mm wafers were on display. One highlight was a working 450mm FOUP load/unload mechanism, albeit from a Japanese manufacturer. These exhibits did illustrate though that 450mm is for real and no longer a paper exercise.  There was also a day-long conference dedicated to 450mm in the largest room. This was crowded throughout the time and a large number of papers were given.

Paul Farrar of G450C began with a presentation about Supply Chain Collaboration for 450mm. His key message was there are 25 different tools delivered to G450C of which 15 are installed in the NFN cleanroom. This number will grow to 42 onsite and 19 offsite by Q1 2015.

He stated that Nikon aims to have a working 193i litho machine in 2H 2014 and install one in Albany in 1H 2015. Farrar also reported a great improvement in wafer quality which now exceed the expected M76 specification, and prime wafers to the M1 spec should be available in Q3 2014. There has also been good progress on wafer reclaim and it is hoped some wafers can be reused up to 10 times, although at least three is the target.

Metrology seems to be one of the most advanced areas with eight different machines already operational. The number of 450mm wafers in their inventory now stands at over 10,000 with these moving between the partners more rapidly. It was immediately noticeable from Farrar’s speech that G450C is now recognising the major contribution Europe is making to 450mm and is looking for more collaborations.

Facilities part of F450C
Peter Csatary of M&W then dealt with the facilities part of G450C, known as F450C. This group consists of:
• M&W (co-ordination)
• Edwards
• Swagelok
• Mega Fluid Systems
• Ovivo
• CH2MHILL
• Haws Corp.
• Air Liquide
• Ceres Technlogies
• CS Clean Systems

F450C is seen as streamlining communications with the semiconductor companies and their process tool suppliers. The group will focus on four key areas, namely Environmental Footprint, Facility Interface Requirements, Cost and Duration, and Safety and Sustainability.

One interesting point raised was that 450mm equipment is inherently more massive and one suggestion has been that ceiling mounted cranes will be required to install and remove equipment. This of course means that fab roofs would need to be stronger than previously. This topic was discussed at the latest F450C meeting subsequent to this conference.

Another new concept is that of a few standardised 3D templates and adapter plates to allow fab services to be pre-installed before the equipment is placed. An interesting point made elsewhere by M&W is that the current preference is to place a fab where there are already other fabs in existence so that the infrastructure to transport products, materials and services is already in place, as are basic utilities such as power, natural gas and water supply.

However, the scale of the expected utility demand at 450 mm ups the stakes as for example a large 300 mm facility uses about 4 million gallons of water per day, whereas a 450 mm fab will use almost double that, putting immense strain on a location’s infrastructure should there be other fabs in the region. This could affect future site selections.

An outcome of this phenomenon is that the reduction, reclaim and re-use of materials will no longer be driven only by the desire to be a good corporate citizen, but will also be driven by cost control and to ensure availability of required resources such as power, water, specialty gases and chemicals.
Read more…

What’s happening with 450mm: G450C update and status

August 16, 2013 Comments off

450mm fab.

450mm fab.

The Global 450mm Consortium (G450C) has been driving the effective industry 450mm development. It is co-ordinating test wafer capability supporting development and demonstrating unit process tool performance. The focus is now on improving tools with suppliers to be ready for customer operations.

Giving an update during the recently held Semicon West 2013 at San Francisco, USA, Paul Ferrer, GM, G450C, said that if one looks at the G450C lithography tool roadmap, by 1H-2014, the 300mm coupon, 450mm directed self-assembly and 450mm imprint will be completed. From 2H-2014 to 1H-2015, there will be 193i patterning service at Nikon’s site. Nikon 193i move-in will take place from 1H-2015 to 2H-2016.

Suppliers are developing the 450mm tool set with 10 tools per quarter being delivered to G450C, the global consortium for 450mm fabs. Significant progress has been made in wafer quality and wafer reclaim is almost ready. Automation and carriers are working, and suppliers are co-operating on the key initiatives. Global collaboration is said to be picking up steam.

In the NFX cleanroom, the 450mm OHT is ready for inter-fab transfer. There are nine tools in-fab — two metro, three process, and four stocker, respectively. There will be seven ODD 3Q2013, and 10 tools ODD 4Q2013, respectively.

As for 450mm notchless wafer activities, the key technical results include the backside fiducial marks that have achieved the desired accuracy (3σ = 0.5μm) using existing camera technology. There are design rules of fiducial marks, such as multiple locations (≤ 4) for robustness and speed, different patterns at multiple locations, and off crystal plane, fewer dots and shallower dots to minimize the Si crystal damage.

As for program highlights, there are collected designs from G450C member companies, tool suppliers, and optical detection suppliers. Also, there has been delivery of 300mm test wafers with fiducial marks. G450C has co-ordinated test wafer plans with suppliers. Further, for 450mm silicon wafer readiness, notchless wafers are technically achievable now.

The G450C members include CNSE/Research Foundation, GLOBALFOUNDRIES, Intel, IBM, Samsung and TSMC.

300mm is the new 200mm!

August 14, 2013 Comments off

300mm fabs.

Buyers of 300mm fabs.

300mm is the new 200mm, said GlobalFoundries’ David Duke, during a presentation titled ‘Used Equipment Market’ at the recently held Semicon West 2013 in San Francisco, USA. Used semiconductor equipment sourcing and sales is a very interesting challenge.

Qimonda, Spansion, Powerchip and ProMOS had jumpstarted the market. Now, there is a broadening user base. There is an unexpected uptake by analog and power device producers to achieve economies of scale. There has been legacy logic scaling. Also, the 200mm fabs are being upgraded to 300mm with used equipment. Many 300mm tools can “bridge” to 200mm easily.

Parts tools are seeding the ecosystem. Third parties are also able to support refurb as well as tool moves. However, we need more! Software licensing is becoming a smaller hurdle. There has been no over-supply yet!

So, what are the ‘rough’ rules of thumb for 300mm? First, there are approximately 1,500 individual tools in the open market. Few sellers know the values as the market is still developing. Twenty percent of the transactions drive 80 percent of sales. Today, the number of 300mm buyers is around  1/10th the number of 200mm buyers!

Lithography has been the biggest difference. Leading edge DRAM is far more expensive in lithography. Lithography has seen the most dramatic financial effects with explosive pricing in technology (immersion) and the need for capacity (two-three critical passes vs. one with dual/triple gate patterning. As of now, financial shocks and bankruptcies are the main drivers for used 300mm.

Next, 200mm is now the new 150mm! The 200mm OEM support is starting to dry up. It is nearly impossible to compete in productivity vs. 300mm. Oversupply is causing values to stay suppressed. The only bright spot being: there is still strong demand for complete fabs. The 200mm market split is roughly by 40 percent Asia and 60 percent rest of the world.

So, what are the likely alternative markets for 200mm and 300mm fabs? These are said to be MEMs and TSV, LEDs and solar PV.

That brings me to India! What are they doing about fabs over here? This article has enough pointers as to what should be done. Otherwise, the world is already moving to 450mm fabs! Am I right?

EC’s goal: Reach 20 percent share in chip manufacturing by 2020!


The European Commission is said to have a goal: to reach 20 percent world-share in chip manufacturing by 2020! Heinz Kundert, president, SEMI Europe, has even laid out an industrial strategy that will cover three complementary lines, such as:

* Transition to 450mm, expected to primarily benefit equipment and material manufacturers in Europe.
* “More than Moore” on 200mm and 300 mm.
* “More Moore” for ultimate miniaturization on 300mm wafers.

Investment will be focusing on Europe’s clusters of excellence in manufacturing and design — Grenoble, Dresden and Eindhoven-Leuven — and support partnerships and alliances across the value chain in Europe.

The key question of why Europe needs 450mm wafers has been answered by Mike Bryant of Future Horizons. The European semiconductor industry’s vision is to recover a leading position in the world throughout the entire value chain and to reverse the current negative trend of its worldwide competitiveness.

Among the many strategies the EC is planning to adopt include:

* Benefit from a single explicit European semiconductor industry policy.
* Maintain a high level of R&D effort, in a balanced way between the 150/200/300/450mm fields, between “More Moore” and “More than Moore”.
* Strengthen all elements of the value chain, from design to application.
* Develop co-operating programs and synergy initiatives between all semiconductor actors operating in Europe.

Europe has always stressed on stronger co-operation among the other industry segments. Some of these are automotive, energy, healthcare and well-being, security and safety, etc.

Moore’s Law good for 14nm, and probably, 10nm: Dr. Wally Rhines

May 31, 2013 Comments off

Its a pleasure to talk to Dr. Walden (Wally) C. Rhines, chairman and CEO, Mentor Graphics Corp. On his way to DAC 2013, where he will be giving a ten-minute “Visionary Talk”, he found time to speak with me. First, I asked him given that the global semiconductor industry is entering the sub-20nm era, will it continue to be ‘business as usual’ or ‘it’s going to be different this time’?

Dr. Wally Rhines.

Dr. Wally Rhines.

Dr. Rhines said: “Every generation has some differences, even though it usually seems like we’ve seen all this before. The primary change that comes with “sub-20nm” is the change in transistor structure to FinFET. This will give designers a boost toward achieving lower power. However, compared to 28nm, there will be a wafer cost penalty to pay for the additional process complexity that also includes two additional levels of resolution enhancement.”

Impact of new transistor structures
How will the new transistor structures impact on design and manufacturing?

According to him, the relatively easy impact on design is related to the simulation of a new device structure; models have already been developed and characterized but will be continuously updated until the processes are stable. More complex are the requirements for place and route and verification; support for “fin grids” and new routing and placement rules has already been implemented by the leading place and route suppliers.

He added: “Most complex is test; FinFET will require transistor-level (or “cell-aware”) design for test to detect failures, rather than just the traditional gate-level stuck-at fault models. Initial results suggest that failure to move to cell-aware ATPG will result in 500 to 1000 DPM parts being shipped to customers.

“Fortunately, “cell-aware” ATPG design tools have been available for about a year and are easily implemented with no additional EDA cost. Finally, there will be manufacturing challenges but, like all manufacturing challenges, they will be attacked, analyzed and resolved as we ramp up more volume.”

Introducing 450mm wafer handling and new lithography
Is it possible to introduce 450mm wafer handling and new lithography successfully at this point in time?

“Yes, of course,” Dr. Rhines said. “However, there are a limited number of companies that have the volume of demand to justify the investment. The wafer diameter transition decision is always a difficult one for the semiconductor manufacturing equipment companies because it is so costly and it requires a minimum volume of machines for a payback. In this case, it will happen. The base of semiconductor manufacturing equipment companies is becoming very concentrated and most of the large ones need the 450mm capability.”

What will be the impact of transistor variability and other physics issues?

As per Dr. Rhines, the impact should be significant. FinFET, for example requires controlling physical characteristics of multiple fins within a narrow range of variability. As geometries shrink, small variations become big percentages. New design challenges are always interesting for engineers but the problems will be overcome relatively quickly.
Read more…

Semicon in sub-20nm era: Business as usual or different?


We are now entering the sub-20nm era. So, will it be business as usual or is it going to be different this time? With DAC 2013 around the corner, I met up with John Chilton, senior VP, Marketing and Strategic Development for Synopsys to find out more regarding the impact of new transistor structures on design and manufacturing, 450mm wafers and the impact of transistor variability.

Impact of new transistor structures on design and manufacturing
First, let us understand what will be the impact of new transistor structures on design and manufacturing.

John Chilton.

John Chilton.

Chilton said: “Most of the impact is really on the manufacturing end since they are effectively 3D transistors. Traditional lithography methods would not work for manufacturing the tall and thin fins where self-aligned double patterning steps are now required.

“Our broad, production-proven products have all been updated to handle the complexity of FinFETs from both the manufacturing and the designer’s end.

“From the design implementation perspective, the foundries’ and Synopsys’ goal is to provide a transparent adoption process where the methodology (from Metal 1 and above) remains essentially the same as that of previous nodes where products have been updated to handle the process complexity.”

Given the scenario, will it be possible to introduce 450mm wafer handling and new lithography successfully?

According to Chilton: “This is a question best asked of the semiconductor manufacturers and equipment vendors. Our opinion is ‘very likely’.” The semiconductor manufacturers, equipment vendors, and the EDA tool providers have a long history of introducing new technology successfully when the economics of deploying the technology is favorable.

The 300nm wafer deployment was quite complex, but was completed, for example. The introduction of double patterning at 20nm is another recent example in which manufacturers, equipment vendors and EDA companies work together to deploy a new technology.

Impact of transistor variability and other physics issues
Finally, what will be the impact of transistor variability and other physics issues?

Chilton said that as transistor scaling progresses into FinFET technologies and beyond, the variability of device behavior becomes more prominent. There are several sources of device variability.

Random doping fluctuations (RDF) are a result of the statistical nature of the position and the discreteness of the electrical charge of the dopant atoms. Whereas in past technologies the effect of the dopant atoms could be treated as a continuum of charge, FinFETs are so small that the charge distribution of the dopant atoms becomes ‘lumpy’ and variable from one transistor to the next.

With the introduction of metal gates in the advanced CMOS processes, random work function fluctuations arising from the formation of finite-sized metal grains with different lattice orientations have also become important. In this effect, each metal grain in the gate, whose crystalline orientation is random, interacts with the underlying gate dielectric and silicon in a different way, with the consequence that the channel electrons no longer see a uniform gate potential.

The other key sources of variability are due to the random location of traps and the etching and lithography processes which produce slightly different dimensions in critical shapes such as fin width and gate length.

“The impact of these variability sources is evident in the output characteristics of FinFETs and circuits, and the systematic analysis of these effects has become a priority for technology development and IP design teams alike,” he added.

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